see also:

Siobhán Daly BSc PhD

B.Sc. (Hons) in Applied Physics from Dublin City University (1989)

Worked in the Semiconductor Physics/Optronics Ireland laboratory in Dublin City University with Prof. M.O. Henry (1989 - 1994) and obtained Ph.D. in 1994 with a thesis entitled "A Photoluminescence Study of a Beryllium Related Defect in Silicon". This work was carried out in collaboration with University of Aveiro in Portugal.

Postdoctoral research at DCU (1994 - 1995) centred on the nature of Er related defect centres in GaAs in conjunction with research groups in Bonn, Lille, Lisbon, and Surrey. A second area of research was in the use of implanted radioactive ions in semiconductors to aid the identification of defect constituents, this work was in conjunction with the ISOLDE facility at CERN.

Appointed to permanent staff of DIT in January 1996, and Assistant Head of School in June 2001.

Current research interests at DIT are in the development of optical and electrical characterisation techniques for defects in semiconductor and novel materials. Research grants have been secured from both Forbairt and DIT currently fund this research.


S.E. Daly, M.O. Henry, K, Frietag and R. Vianden.
Radioactive Isotopes for Photoluminescence Spectroscopy - 111In in Silicon
J. Phys.: Condens. Matter 6 (1994) L643 - L650

S.E. Daly, E. McGlynn, M.O. Henry, J.D. Campion, M.C. do Carmo and M.H. Nazare.
Oxygen Complexing With Group II Impurities in Silicon
Materials Science Forum. 196-201 (1995) 1303 - 1308

S.E. Daly, M.O. Henry, C. A. Frehill, K. Frietag, R. Vianden and D. Forkel.
The Chemical Identification of Defect Impurities Using Radioactive Isotopes
Materials Science Forum. 196-201 (1995) 1497 - 1502

S.E. Daly, M.O. Henry, E. Alves, M.F. da Silva, J.C. Soares, R. Gwilliam, B.J. Sealy, K. Frietag, R. Vianden and D. Stievenard.
Rutherford Backscattering and Photoluminescence Studies of Erbium implanted GaAs
Mat. Res. Soc. Symp. Proc. Vol. 422 (1996) 173-178

S.E. Daly, E. McGlynn, M.O. Henry, J.D. Campion, K.G. McGuigan, M.C. do Carmo and M.H.Nazare
The Complexing of Oxygen with Be, Cd and Zn in Silicon
Mat. Science and Engineering. B36 (1996) 116-119.

S.E. Daly, M.O. Henry, K.G. McGuigan and M.C. do Carmo.
A Complex Luminescent Defect in Be-Doped Oxygen Rich Silicon
Semicond. Sci. and Tecnhnology. 11 (1996) 996-1001

K.G. McGuigan, M.O. Henry, J.D. Campion, S.E. Daly, E. McGlynn, M.C. do Carmo.
A Series of Closely Related Axial Defects of Monoclinic I and Rhombic I Symmetry in Oxygen Rich Zn Doped Silicon.
Semicond. Sci. and Technol. 11 (1996) 930-934

M.O. Henry, S.E. Daly, C.A. Frehill, E. McGlynn, C. McDonagh, E. Alves, J.C. Soares and D. Forkel.
A photoluminescence Study of Gold and Platinum Related Defects in Silicon Using Radioactive Transformations
ICPS-23 (1996)

C.A. Freehill, M.O. Henry, E. McGlynn, S.E. Daly, M. Deicher, R. Magerle, K.G. McGuigan, A. Safanov, E.C. Lightowlers.
Novel Luminescent Centres in Cadmium Doped Silicon.
Materials Science Forum (Trans Tech Publications) - Accepted for Publication. (July 1997)